features trenchfet power mosfet 175 c junction temperature pwm optimized for high efficiency 100% r g tested applications synchronous buck converter ? low side synchronous rectifier ? secondary rectifier sur70n02-04p vishay siliconix new product document number: 72776 s-32697?rev. a, 19-jan-04 www.vishay.com 1 n-channel 20-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) a 20 0.0037 @ v gs = 10 v 37 20 0.0061 @ v gs = 4.5 v 29 d g s n-channel mosfet to-252 reverse lead dpak top view drain connected to tab ordering information: sur70n02-04p?e3 sur70n02-04p-t4?e3 (altrenate tape orientation) s gd absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 v continuous drain current a t a = 25 c i d 37 a continuous drain current a t c = 25 c i d 70 b pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 37 single pulse a valanche current l = 0 1 mh i as 30 single pulse a valanche energy l = 0.1 mh e as 45 mj maximum power dissipation t a = 25 c p d 8.3 a w maximum power dissipation t c = 25 c p d 93 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 10 sec r 15 18 maximum junction-to-ambient a steady state r thja 40 50 c/w maximum junction-to-case r thjc 1.3 1.6 c/w notes a. surface mounted on fr4 board, t 10 sec. b. limited by package
sur70n02-04p vishay siliconix new product www.vishay.com 2 document number: 72776 s-32697?rev. a, 19-jan-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 20 a 0.0028 0.0037 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.0052 drain source on state resistance r ds(on) v gs = 4.5 v, i d = 20 a 0.0047 0.0061 forward transconductance b g fs v ds = 15 v, i d = 20 a 15 s dynamic a input capacitance c iss 4500 output capacitance c oss v gs = 0 v, v ds = 10 v, f = 1 mhz 1520 pf reverse transfer capacitance c rss 800 p gate resistance r g 0.5 1.1 1.8 total gate charge c q g 34 153 gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 50 a 11 nc gate-drain charge c q gd v ds 10 v, v gs 4.5 v, i d 50 a 10 nc turn-on delay time c t d(on) 15 25 rise time c t r v dd = 10 v, r l = 0.2 11 20 ns turn-off delay time c t d(off) v dd = 10 v , r l = 0 . 2 i d 50 a, v gen = 10 v, r g = 2.5 35 55 ns fall time c t f g 15 25 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 45 90 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 c unless noted) 0 20 40 60 80 100 120 140 160 0246810 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 25 c ? 55 c 2 v t c = 125 c v gs = 10 thru 4 v 3 v
sur70n02-04p vishay siliconix new product document number: 72776 s-32697?rev. a, 19-jan-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0 20406080100 0 2 4 6 8 10 0 1530456075 0 20 40 60 80 100 120 0 1020304050 0 1000 2000 3000 4000 5000 6000 048121620 capacitance gate charge transconductance on-resistance vs. drain current ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs v ds = 10 v i d = 50 a v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c c iss i d ? drain current (a) c oss (normalized) ? on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0 10
sur70n02-04p vishay siliconix new product www.vishay.com 4 document number: 72776 s-32697?rev. a, 19-jan-04 thermal ratings 0.1 0 8 16 24 32 40 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt t emperature t a ? ambient t emperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 1000 100 0.1 10 s 100 s limited by r ds(on) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 0.2 duty cycle = 0.5 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse
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